Pocket implanted n-MOSFET structure with split drains.

Abnormally high local electrical fluctuations in heavily pocket-implanted bulk long MOSFET - ScienceDirect

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Digital VLSI Design : Combinational Circuit

Why is source and drain orientation important in VLSI while dealing with well proximity effect? - Quora

Pocket implanted n-MOSFET structure.

Pocket implanted n-MOSFET structure.

6. Applications

PDF) A Semi-Analytical Drain Current Deflection Model for the

Semiconductor Devices: Depletion MOSFET

PDF) A Semi-Analytical Drain Current Deflection Model for the

Pocket implanted n-MOSFET structure with split drains.

FETs (Field-Effect Transistors) - Discrete Semiconductor Products - Electronic Component and Engineering Solution Forum - TechForum │ DigiKey

Drain current deflection in the positive y-direction with